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128Mb: x16 Mobile SDRAM
Notes
23. The clock frequency must remain constant (stable clock is defined as a signal cycling
within timing constraints specified for the clock pin) during access or precharge
states (READ, WRITE, including t WR, and PRECHARGE commands). CKE may be
used to reduce the data rate.
24. Auto precharge mode only. The precharge timing budget ( t RP) begins at 7.5ns for -75
and 7ns for -8 after the first clock delay, after the last WRITE is executed. For auto pre-
charge mode, at least one clock cycle is required during t WR.
25. CKE is HIGH during REFRESH command period t RFC (MIN) else CKE is LOW.
26. Measurement is taken 500ms after entering into this operating mode to allow tester
measurement settling time.
27. Values for I DD 7 85°C 4 bank, 2 bank, and 1 bank are guaranteed for the entire temper-
ature range. All other I DD 7 values are estimated.
28. Deep power-down current is a nominal value at 25°C. This parameter is not tested.
PDF: 09005aef8237e877/Source: 09005aef8237e8d8
128Mb_x16 Mobile SDRAM_Y25M_2.fm - Rev. C 2/07 EN
43
Micron Technology, Inc., reserves the right to change products or specifications without notice.
?2006 Micron Technology, Inc. All rights reserved.
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